Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-H...

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Bibliographic Details
Main Authors: Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Energies
Subjects:
MOSc-HEMT
GaN
MOS
Etching
surface preparation
insulator
Online Access:https://www.mdpi.com/1996-1073/16/7/2978

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https://www.mdpi.com/1996-1073/16/7/2978

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