Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO<sub>2</sub>)-based resistive random-access memories (RRAMs). CeO<sub>2</sub> is considered the most promising candidate because of its multiple oxidation states (Ce<s...

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Bibliographic Details
Main Authors: Sarfraz Ali, Muhammad Abaid Ullah, Ali Raza, Muhammad Waqas Iqbal, Muhammad Farooq Khan, Maria Rasheed, Muhammad Ismail, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Nanomaterials
Subjects:
CeO<sub>2</sub>
RRAM memristive devices
filamentary mechanisms
symmetric and asymmetric electrodes
switching layers
capping layers
Online Access:https://www.mdpi.com/2079-4991/13/17/2443

Internet

https://www.mdpi.com/2079-4991/13/17/2443

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