Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors

Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors

In this work, we demonstrate the effectiveness of nitrogen plasma treatment on the formation of low-resistive source/drain (S/D) in self-aligned (SA) oxide thin-film transistors (TFTs) using a high-mobility oxide semiconductor (OS), In-Ga-Zn-Sn-O (IGZTO). The nitrogen plasma treatment was more effec...

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Bibliographic Details
Main Authors: Hiroshi Tsuji, Tatsuya Takei, Mototaka Ochi, Masashi Miyakawa, Kohei Nishiyama, Yoshiki Nakajima, Mitsuru Nakata
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thin-film transistor
self-aligned process
nitrogen plasma
argon plasma
parasitic resistance
parasitic capacitance
Online Access:https://ieeexplore.ieee.org/document/9714498/

Internet

https://ieeexplore.ieee.org/document/9714498/

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