Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology
An amorphous indium tin oxide (ITO) film (Ar/O<sub>2</sub> = 80:0.5) was heated to 400 °C and maintained for 1–9 min using rapid infrared annealing (RIA) technology and conventional furnace annealing (CFA) technology. The effect of holding time on the structure, optical and electrical pr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/10/3803 |