Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties
In this study, epitaxial graphene layers of cm<sup>2</sup> sizes were grown on silicon carbide (SiC) substrates by high-temperature sublimation. The behavior of the two crystallographic SiC-polar faces and its effect on the growth mechanism of graphene layers and their properties were in...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/2/189 |