The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

The influence of excessive H _2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H _2 treatment. Temperature-dependent photoluminescence (TDPL) re...

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Bibliographic Details
Main Authors: Yangfeng Li, Shen Yan, Die Junhui, Xiaotao Hu, Yimeng Song, Zhen Deng, Chunhua Du, Wenqi Wang, Ziguang Ma, Lu Wang, Haiqiang Jia, Wenxin Wang, Junming Zhou, Yang Jiang, Hong Chen
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
hydrogen
InGaN
TDPL
EQE
leakage current
Online Access:https://doi.org/10.1088/2053-1591/abc18f

Internet

https://doi.org/10.1088/2053-1591/abc18f

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