Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures

Abstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevita...

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Bibliographic Details
Main Authors: Sunwoo Lee, Jaeyoung Jeon, Kitae Eom, Chaehwa Jeong, Yongsoo Yang, Ji-Yong Park, Chang-Beom Eom, Hyungwoo Lee
Format: Article
Language:English
Published: Nature Portfolio 2022-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-022-13121-4