Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures
Abstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevita...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-13121-4 |
| _version_ | 1817968828531867648 |
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| author | Sunwoo Lee Jaeyoung Jeon Kitae Eom Chaehwa Jeong Yongsoo Yang Ji-Yong Park Chang-Beom Eom Hyungwoo Lee |
| author_facet | Sunwoo Lee Jaeyoung Jeon Kitae Eom Chaehwa Jeong Yongsoo Yang Ji-Yong Park Chang-Beom Eom Hyungwoo Lee |
| author_sort | Sunwoo Lee |
| collection | DOAJ |
| description | Abstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO3/SrTiO3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications. |
| first_indexed | 2024-04-13T20:13:48Z |
| format | Article |
| id | doaj.art-97aafaf9db4846ab915951b2c3af92c4 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-13T20:13:48Z |
| publishDate | 2022-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-97aafaf9db4846ab915951b2c3af92c42022-12-22T02:31:46ZengNature PortfolioScientific Reports2045-23222022-05-0112111010.1038/s41598-022-13121-4Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructuresSunwoo Lee0Jaeyoung Jeon1Kitae Eom2Chaehwa Jeong3Yongsoo Yang4Ji-Yong Park5Chang-Beom Eom6Hyungwoo Lee7Department of Electrical and Computer Engineering, University of Southern CaliforniaDepartment of Physics, Ajou UniversityDepartment of Materials Science and Engineering, University of Wisconsin-MadisonDepartment of Physics, Korea Advanced Institute of Science and Technology (KAIST)Department of Physics, Korea Advanced Institute of Science and Technology (KAIST)Department of Physics, Ajou UniversityDepartment of Materials Science and Engineering, University of Wisconsin-MadisonDepartment of Physics, Ajou UniversityAbstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO3/SrTiO3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.https://doi.org/10.1038/s41598-022-13121-4 |
| spellingShingle | Sunwoo Lee Jaeyoung Jeon Kitae Eom Chaehwa Jeong Yongsoo Yang Ji-Yong Park Chang-Beom Eom Hyungwoo Lee Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures Scientific Reports |
| title | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures |
| title_full | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures |
| title_fullStr | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures |
| title_full_unstemmed | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures |
| title_short | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures |
| title_sort | variance aware weight quantization of multi level resistive switching devices based on pt laalo3 srtio3 heterostructures |
| url | https://doi.org/10.1038/s41598-022-13121-4 |
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