Boron Impurity Deposition on a Si(100) Surface in a SiHCl<sub>3</sub>-BCl<sub>3</sub>-H<sub>2</sub> System for Electronic-Grade Polysilicon Production

Boron Impurity Deposition on a Si(100) Surface in a SiHCl<sub>3</sub>-BCl<sub>3</sub>-H<sub>2</sub> System for Electronic-Grade Polysilicon Production

A study of boron impurities deposited on a Si(100) surface in a SiHCl<sub>3</sub>-BCl<sub>3</sub>-H<sub>2</sub> system is reported in this paper, using periodic density functional theory with generalized gradient approximation (GGA). The results show that the disc...

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Bibliographic Details
Main Authors: Qinghong Yang, Fengyang Chen, Lin Tian, Jianguo Wang, Ni Yang, Yanqing Hou, Lingyun Huang, Gang Xie
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Minerals
Subjects:
electronic-grade polysilicon
boron impurities
chemical vapor deposition
density functional theory
differential charge density
Online Access:https://www.mdpi.com/2075-163X/12/5/651

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https://www.mdpi.com/2075-163X/12/5/651

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