Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

We report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0.3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. Dispersion...

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Main Authors: B Graczykowski, J Gomis-Bresco, F Alzina, J S Reparaz, A Shchepetov, M Prunnila, J Ahopelto, C M Sotomayor Torres
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/16/7/073024
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author B Graczykowski
J Gomis-Bresco
F Alzina
J S Reparaz
A Shchepetov
M Prunnila
J Ahopelto
C M Sotomayor Torres
author_facet B Graczykowski
J Gomis-Bresco
F Alzina
J S Reparaz
A Shchepetov
M Prunnila
J Ahopelto
C M Sotomayor Torres
author_sort B Graczykowski
collection DOAJ
description We report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0.3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. Dispersion relations of thermally activated hypersonic phonons were measured by means of Brillouin light scattering spectroscopy. The theory of Lamb wave propagation is developed for anisotropic materials subjected to an external static stress field. The dispersion relations were calculated using the elastic continuum approximation and taking into account the acousto-elastic effect. We find an excellent agreement between the theoretical and the experimental dispersion relations.
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spelling doaj.art-97f4e0c3d46e44109d3b5ddc733099872023-08-08T11:30:08ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116707302410.1088/1367-2630/16/7/073024Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress fieldB Graczykowski0J Gomis-Bresco1F Alzina2J S Reparaz3A Shchepetov4M Prunnila5J Ahopelto6C M Sotomayor Torres7ICN2—Institut Catala de Nanociencia i Nanotecnologia , Campus UAB, E-08193 Bellaterra (Barcelona), SpainICN2—Institut Catala de Nanociencia i Nanotecnologia , Campus UAB, E-08193 Bellaterra (Barcelona), SpainICN2—Institut Catala de Nanociencia i Nanotecnologia , Campus UAB, E-08193 Bellaterra (Barcelona), SpainICN2—Institut Catala de Nanociencia i Nanotecnologia , Campus UAB, E-08193 Bellaterra (Barcelona), SpainVTT Technical Research Centre of Finland , PO Box 1000, FI-02044 VTT, Espoo, FinlandVTT Technical Research Centre of Finland , PO Box 1000, FI-02044 VTT, Espoo, FinlandVTT Technical Research Centre of Finland , PO Box 1000, FI-02044 VTT, Espoo, FinlandICN2—Institut Catala de Nanociencia i Nanotecnologia , Campus UAB, E-08193 Bellaterra (Barcelona), Spain; ICREA-Institucio Catalana de Recerca i Estudis Avançats , E-08010 Barcelona, SpainWe report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0.3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. Dispersion relations of thermally activated hypersonic phonons were measured by means of Brillouin light scattering spectroscopy. The theory of Lamb wave propagation is developed for anisotropic materials subjected to an external static stress field. The dispersion relations were calculated using the elastic continuum approximation and taking into account the acousto-elastic effect. We find an excellent agreement between the theoretical and the experimental dispersion relations.https://doi.org/10.1088/1367-2630/16/7/073024acoustic phononsultra-thin Si membranesBrillouin light scattering43.35.Pt78.35.+c85.85.+j
spellingShingle B Graczykowski
J Gomis-Bresco
F Alzina
J S Reparaz
A Shchepetov
M Prunnila
J Ahopelto
C M Sotomayor Torres
Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
New Journal of Physics
acoustic phonons
ultra-thin Si membranes
Brillouin light scattering
43.35.Pt
78.35.+c
85.85.+j
title Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
title_full Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
title_fullStr Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
title_full_unstemmed Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
title_short Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field
title_sort acoustic phonon propagation in ultra thin si membranes under biaxial stress field
topic acoustic phonons
ultra-thin Si membranes
Brillouin light scattering
43.35.Pt
78.35.+c
85.85.+j
url https://doi.org/10.1088/1367-2630/16/7/073024
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AT jgomisbresco acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT falzina acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT jsreparaz acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT ashchepetov acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT mprunnila acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT jahopelto acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield
AT cmsotomayortorres acousticphononpropagationinultrathinsimembranesunderbiaxialstressfield