Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy
Vanadium sesquioxide (V2O3) is a strongly correlated electron material exhibiting two distinct metal–insulator transitions that can be tuned via strain, doping, or pressure, making it an interesting material for new-generation sensors or smart devices. For this purpose, it is required to achieve wel...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-06-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723002735 |