Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy
Vanadium sesquioxide (V2O3) is a strongly correlated electron material exhibiting two distinct metal–insulator transitions that can be tuned via strain, doping, or pressure, making it an interesting material for new-generation sensors or smart devices. For this purpose, it is required to achieve wel...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-06-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723002735 |
| _version_ | 1797814419633209344 |
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| author | Alberto Binetti Wei-Fan Hsu Koen Schouteden Jin Won Seo Jean-Pierre Locquet Maria Recaman Payo |
| author_facet | Alberto Binetti Wei-Fan Hsu Koen Schouteden Jin Won Seo Jean-Pierre Locquet Maria Recaman Payo |
| author_sort | Alberto Binetti |
| collection | DOAJ |
| description | Vanadium sesquioxide (V2O3) is a strongly correlated electron material exhibiting two distinct metal–insulator transitions that can be tuned via strain, doping, or pressure, making it an interesting material for new-generation sensors or smart devices. For this purpose, it is required to achieve well-ordered epitaxial thin film growth with high-quality electrical and optical properties on technologically relevant substrates. We report the successful growth of epitaxial thin films of V2O3 via molecular beam epitaxy, in the paramagnetic insulating (PI) phase on the (111) plane of silicon, by tailoring the growth conditions. Extensive electrical, structural, and morphological characterization both in situ and ex situ has been performed on all samples. The structural analysis reveals that temperature plays a more impactful role in affecting the thin film microstructures than the oxygen partial pressure. When the epitaxy of V2O3 occurs on the unoxidized (111) plane of silicon, four equivalent epitaxial domains begin to form, leading to twin boundaries in the bulk of the film. The considerable lattice mismatch between silicon and V2O3 induces the growth of the corundum PI phase. Lastly, small deviations from stoichiometry due to different oxygen inflow during growth alter significantly the resistivity change upon cooling. |
| first_indexed | 2024-03-13T08:07:30Z |
| format | Article |
| id | doaj.art-981c6b7369044495acf6796285699852 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-13T08:07:30Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-981c6b7369044495acf67962856998522023-06-01T04:35:44ZengElsevierResults in Physics2211-37972023-06-0149106480Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxyAlberto Binetti0Wei-Fan Hsu1Koen Schouteden2Jin Won Seo3Jean-Pierre Locquet4Maria Recaman Payo5Department of Physics and Astronomy, KU Leuven, Leuven B-3001, Belgium; Corresponding author.Department of Physics and Astronomy, KU Leuven, Leuven B-3001, BelgiumDepartment of Physics and Astronomy, KU Leuven, Leuven B-3001, BelgiumDepartment of Materials Engineering, KU Leuven, Leuven B-3001, BelgiumDepartment of Physics and Astronomy, KU Leuven, Leuven B-3001, BelgiumDepartment of Physics and Astronomy, KU Leuven, Leuven B-3001, BelgiumVanadium sesquioxide (V2O3) is a strongly correlated electron material exhibiting two distinct metal–insulator transitions that can be tuned via strain, doping, or pressure, making it an interesting material for new-generation sensors or smart devices. For this purpose, it is required to achieve well-ordered epitaxial thin film growth with high-quality electrical and optical properties on technologically relevant substrates. We report the successful growth of epitaxial thin films of V2O3 via molecular beam epitaxy, in the paramagnetic insulating (PI) phase on the (111) plane of silicon, by tailoring the growth conditions. Extensive electrical, structural, and morphological characterization both in situ and ex situ has been performed on all samples. The structural analysis reveals that temperature plays a more impactful role in affecting the thin film microstructures than the oxygen partial pressure. When the epitaxy of V2O3 occurs on the unoxidized (111) plane of silicon, four equivalent epitaxial domains begin to form, leading to twin boundaries in the bulk of the film. The considerable lattice mismatch between silicon and V2O3 induces the growth of the corundum PI phase. Lastly, small deviations from stoichiometry due to different oxygen inflow during growth alter significantly the resistivity change upon cooling.http://www.sciencedirect.com/science/article/pii/S2211379723002735V2O3Si(111)EpitaxyMolecular beam epitaxyX-ray diffractionTransmission electron microscope |
| spellingShingle | Alberto Binetti Wei-Fan Hsu Koen Schouteden Jin Won Seo Jean-Pierre Locquet Maria Recaman Payo Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy Results in Physics V2O3 Si(111) Epitaxy Molecular beam epitaxy X-ray diffraction Transmission electron microscope |
| title | Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy |
| title_full | Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy |
| title_fullStr | Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy |
| title_full_unstemmed | Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy |
| title_short | Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy |
| title_sort | epitaxial growth of v2o3 thin films on si 111 by molecular beam epitaxy |
| topic | V2O3 Si(111) Epitaxy Molecular beam epitaxy X-ray diffraction Transmission electron microscope |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723002735 |
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