Improved Performance of GaN-Based Ultraviolet LEDs With Electron Blocking Layers Composed of Double-Peak <italic>p</italic>-Type Al<sub><italic>x</italic></sub>Ga<sub>1&#x2212;<italic>x</italic></sub>N/GaN Superlattice Layers

Improved Performance of GaN-Based Ultraviolet LEDs With Electron Blocking Layers Composed of Double-Peak <italic>p</italic>-Type Al<sub><italic>x</italic></sub>Ga<sub>1&#x2212;<italic>x</italic></sub>N/GaN Superlattice Layers

Past studies have demonstrated the positive impact of step-graded <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-type Al<sub><italic>x</italic></sub>Ga<sub>1&#x2212;<italic>x</italic></su...

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Bibliographic Details
Main Authors: Yong Huang, Zhiyou Guo, Miao Zhang, Dan Xiang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Light emitting diodes
ultraviolet sources
superlattice electron blocking layers
Online Access:https://ieeexplore.ieee.org/document/9416661/

Internet

https://ieeexplore.ieee.org/document/9416661/

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