Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis
The strong polarization effects and abundant surface states in III-nitrides result in a tunable electric field, modifying the absorption/emission by changing the band structure. Thus, the mechanism of the electric field and the absorption/emission is crucial for future optical logic devices. Here, w...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0180220 |