A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis
This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filli...
Main Authors: | Jintao Wang, Fangcheng Duan, Ziwen Lv, Si Chen, Xiaofeng Yang, Hongtao Chen, Jiahao Liu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-07-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/13/14/8301 |
Similar Items
-
A RF Redundant TSV Interconnection for High Resistance Si Interposer
by: Mengcheng Wang, et al.
Published: (2021-02-01) -
Virtualization-Based Efficient TSV Repair for 3-D Integrated Circuits
by: Muhammad Imran, et al.
Published: (2020-01-01) -
Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging
by: Xuanjie Liu, et al.
Published: (2021-09-01) -
A review on TSV reliability
by: Wang Shuo, et al.
Published: (2021-02-01) -
Dielectric quality of 3D capacitor embedded in through-silicon via (TSV)
by: Lin, Ye, et al.
Published: (2020)