Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction
Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique. However, the NiO film made by the sparking method indicates a porous surface with an agglomera...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab8df6 |
| _version_ | 1797746346999939072 |
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| author | Posak Tippo Wiradej Thongsuwan Orawan Wiranwetchayan Tewasin Kumpika Adisorn Tuantranont Pisith Singjai |
| author_facet | Posak Tippo Wiradej Thongsuwan Orawan Wiranwetchayan Tewasin Kumpika Adisorn Tuantranont Pisith Singjai |
| author_sort | Posak Tippo |
| collection | DOAJ |
| description | Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique. However, the NiO film made by the sparking method indicates a porous surface with an agglomeration of its particles. In order to reduce the porousness of the NiO film, the assistance of a permanent magnet in the sparking apparatus is presented. Here, we report the investigation of the NiO film and the p-NiO/n-ZnO heterojunction deposited by the sparking method under a magnetic field. Our results demonstrate that the porosity of the NiO film was reduced by increasing the magnitude of a magnetic field from 0 mT to 375 mT. Furthermore, the crystallinity and the electrical properties of the NiO film are improved by the influent of a magnetic field. For heterojunction, the best device shows the rectification ratio of 95 and the ideality factor of 4.92. This work provides an alternative method for the deposition of the NiO film with promising applications in optoelectronic devices. |
| first_indexed | 2024-03-12T15:36:31Z |
| format | Article |
| id | doaj.art-985febc9812f4b82ae66d0797c950e79 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:36:31Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-985febc9812f4b82ae66d0797c950e792023-08-09T16:12:53ZengIOP PublishingMaterials Research Express2053-15912020-01-017505640310.1088/2053-1591/ab8df6Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunctionPosak Tippo0https://orcid.org/0000-0001-8820-3475Wiradej Thongsuwan1Orawan Wiranwetchayan2Tewasin Kumpika3https://orcid.org/0000-0002-4555-6585Adisorn Tuantranont4Pisith Singjai5Department of Physics and Materials Science, Faculty of Science, Chiang Mai University , Chiang Mai 50200, Thailand; Graduate School, Chiang Mai University , Chiang Mai 50200, ThailandDepartment of Physics and Materials Science, Faculty of Science, Chiang Mai University , Chiang Mai 50200, ThailandDepartment of Physics and Materials Science, Faculty of Science, Chiang Mai University , Chiang Mai 50200, ThailandCenter of Excellence in Materials Science and Technology, Chiang Mai University , Chiang Mai 50200, ThailandCenter of Excellence in Advanced Materials for Printed Electronics and Sensors (CMU-NECTEC), Pathumthani 12120, ThailandDepartment of Physics and Materials Science, Faculty of Science, Chiang Mai University , Chiang Mai 50200, ThailandNickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique. However, the NiO film made by the sparking method indicates a porous surface with an agglomeration of its particles. In order to reduce the porousness of the NiO film, the assistance of a permanent magnet in the sparking apparatus is presented. Here, we report the investigation of the NiO film and the p-NiO/n-ZnO heterojunction deposited by the sparking method under a magnetic field. Our results demonstrate that the porosity of the NiO film was reduced by increasing the magnitude of a magnetic field from 0 mT to 375 mT. Furthermore, the crystallinity and the electrical properties of the NiO film are improved by the influent of a magnetic field. For heterojunction, the best device shows the rectification ratio of 95 and the ideality factor of 4.92. This work provides an alternative method for the deposition of the NiO film with promising applications in optoelectronic devices.https://doi.org/10.1088/2053-1591/ab8df6magnetic fieldoptoelectronicsspark dischargesemiconductorheterojunctionnickel oxide |
| spellingShingle | Posak Tippo Wiradej Thongsuwan Orawan Wiranwetchayan Tewasin Kumpika Adisorn Tuantranont Pisith Singjai Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction Materials Research Express magnetic field optoelectronics spark discharge semiconductor heterojunction nickel oxide |
| title | Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction |
| title_full | Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction |
| title_fullStr | Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction |
| title_full_unstemmed | Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction |
| title_short | Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction |
| title_sort | investigation of nio film by sparking method under a magnetic field and nio zno heterojunction |
| topic | magnetic field optoelectronics spark discharge semiconductor heterojunction nickel oxide |
| url | https://doi.org/10.1088/2053-1591/ab8df6 |
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