Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties and demonstrate great potential for replacing conventional silicon (Si) semiconductors with WBG technology, pushing the boundaries of power devices to handle higher blocki...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
China Electrotechnical Society
2021-09-01
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| Series: | CES Transactions on Electrical Machines and Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9551817 |