Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control
We have experimentally demonstrated memory operation of a HfO<sub>2</sub>-based ferroelectric FET (FeFET) with an ultrathin MoS<sub>2</sub> channel and bottom-gate structure. ZrO<sub>2</sub> seed layer enhances ferroelectricity in HfZrO<sub>2</sub> by...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9642045/ |