Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whe...

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Bibliographic Details
Main Authors: Asif Ali, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, Jongwan Jung
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Nanomaterials
Subjects:
graphene
DUV irradiation
p-doping
n-doping
pn-junction
Online Access:https://www.mdpi.com/2079-4991/11/11/3003

Internet

https://www.mdpi.com/2079-4991/11/11/3003

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