Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates
An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the qua...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Faculty of Technical Sciences in Cacak
2011-01-01
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| Series: | Serbian Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-4869/2011/1451-48691102147C.pdf |