Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates
An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the qua...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Faculty of Technical Sciences in Cacak
2011-01-01
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| Series: | Serbian Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-4869/2011/1451-48691102147C.pdf |
| Summary: | An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement. |
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| ISSN: | 1451-4869 2217-7183 |