Crystal Growth of Semiconductor CuAl0.4Ti0.6Se2 and studding the Structural Properties of its Alloy and Thin Film
Tetragonal compound CuAl0.4Ti0.6Se2 semiconductor has been prepared by melting the elementary elements of high purity in evacuated quartz tube under low pressure 10-2 mbar and temperature 1100 oC about 24 hr. Single crystal has been growth from this compound using slowly cooled average between (1-2...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2009-10-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/904 |