Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
Recently, detailed characterisation of materials and evaluation of devices based on low temperature (LT) grown InGaAs-InAlAs and GaAs-based terahertz (THZ) photoconductors using the Molecular Beam Epitaxy (MBE) technique have been reported by our group. In this work, the characterisation is extended...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4824011 |