A variable probe pitch micro-Hall effect method
Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here,...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2018-07-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.9.192 |
| _version_ | 1819071840257048576 |
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| author | Maria-Louise Witthøft Frederik W. Østerberg Janusz Bogdanowicz Rong Lin Henrik H. Henrichsen Ole Hansen Dirch H. Petersen |
| author_facet | Maria-Louise Witthøft Frederik W. Østerberg Janusz Bogdanowicz Rong Lin Henrik H. Henrichsen Ole Hansen Dirch H. Petersen |
| author_sort | Maria-Louise Witthøft |
| collection | DOAJ |
| description | Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility. |
| first_indexed | 2024-12-21T17:28:13Z |
| format | Article |
| id | doaj.art-9925878a02544c3ca0e0b1eaafbea23f |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-21T17:28:13Z |
| publishDate | 2018-07-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-9925878a02544c3ca0e0b1eaafbea23f2022-12-21T18:55:59ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-07-01912032203910.3762/bjnano.9.1922190-4286-9-192A variable probe pitch micro-Hall effect methodMaria-Louise Witthøft0Frederik W. Østerberg1Janusz Bogdanowicz2Rong Lin3Henrik H. Henrichsen4Ole Hansen5Dirch H. Petersen6DTU Nanotech, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, DenmarkCAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, DenmarkIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumCAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, DenmarkCAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, DenmarkDTU Nanotech, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, DenmarkDTU Nanotech, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, DenmarkHall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.https://doi.org/10.3762/bjnano.9.192four-point probesHall effectmetrologymobilityvariable Probe Pitch |
| spellingShingle | Maria-Louise Witthøft Frederik W. Østerberg Janusz Bogdanowicz Rong Lin Henrik H. Henrichsen Ole Hansen Dirch H. Petersen A variable probe pitch micro-Hall effect method Beilstein Journal of Nanotechnology four-point probes Hall effect metrology mobility variable Probe Pitch |
| title | A variable probe pitch micro-Hall effect method |
| title_full | A variable probe pitch micro-Hall effect method |
| title_fullStr | A variable probe pitch micro-Hall effect method |
| title_full_unstemmed | A variable probe pitch micro-Hall effect method |
| title_short | A variable probe pitch micro-Hall effect method |
| title_sort | variable probe pitch micro hall effect method |
| topic | four-point probes Hall effect metrology mobility variable Probe Pitch |
| url | https://doi.org/10.3762/bjnano.9.192 |
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