Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices
Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID response variability on silicon-based VDMOS device...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/6/1403 |