Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development. With continuous technology scalings to nanometer scales, TDDB issue is further exacerbated. In this paper, two failure mechanisms were investigated: the Ta ions migration mo...

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Bibliographic Details
Main Authors: Dan Dan Wang, Wei Lin Wang, Maggie Yamin Huang, Alan Lek, Jeffrey Lam, Zhi Hong Mai
Format: Article
Language:English
Published: AIP Publishing LLC 2014-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4890960

Internet

http://dx.doi.org/10.1063/1.4890960

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