THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD
Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum w...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2013-08-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/573 |