THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD
Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum w...
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2013-08-01
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| Series: | Тонкие химические технологии |
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| Online Access: | https://www.finechem-mirea.ru/jour/article/view/573 |
| _version_ | 1797882124044337152 |
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| author | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk |
| author_facet | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk |
| author_sort | Т. А. Bagaev |
| collection | DOAJ |
| description | Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum wells with and without GaAsP compensation layer the photoluminescence method at room temperature was used. It is shown that optimal thickness and content of InGaAs layers lies in the small metastable region, which was accurately calculated. The effective critical stress, which leads to misfit dislocations formation, was found and equals to 0.014mGaAs (where mGaAs is rigidity modulus in GaAs). The GaAsP compensation layers close to highly strained quantum wells for better reproducibility of the growth method were proposed. Finally, the best position of the GaAsP layer for higher photoluminescence signal has been chosen and discussed. |
| first_indexed | 2024-04-10T03:29:58Z |
| format | Article |
| id | doaj.art-997e42334f2f40419d7a38c219ad00da |
| institution | Directory Open Access Journal |
| issn | 2410-6593 2686-7575 |
| language | Russian |
| last_indexed | 2024-04-10T03:29:58Z |
| publishDate | 2013-08-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Тонкие химические технологии |
| spelling | doaj.art-997e42334f2f40419d7a38c219ad00da2023-03-13T07:25:34ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752013-08-01847376567THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVDТ. А. Bagaev0М. А. Ladugin1А. А. Padalitsa2А. А. Marmalyuk3M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571ООО «Сигм Плюс», Москва, 117342ООО «Сигм Плюс», Москва, 117342M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum wells with and without GaAsP compensation layer the photoluminescence method at room temperature was used. It is shown that optimal thickness and content of InGaAs layers lies in the small metastable region, which was accurately calculated. The effective critical stress, which leads to misfit dislocations formation, was found and equals to 0.014mGaAs (where mGaAs is rigidity modulus in GaAs). The GaAsP compensation layers close to highly strained quantum wells for better reproducibility of the growth method were proposed. Finally, the best position of the GaAsP layer for higher photoluminescence signal has been chosen and discussed.https://www.finechem-mirea.ru/jour/article/view/573quantum well, ingaas, compensation layer gaasp, misfit dislocation, elastic stresses, mocvd. |
| spellingShingle | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD Тонкие химические технологии quantum well, ingaas, compensation layer gaasp, misfit dislocation, elastic stresses, mocvd. |
| title | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD |
| title_full | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD |
| title_fullStr | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD |
| title_full_unstemmed | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD |
| title_short | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD |
| title_sort | effect of elastic stress on the process of obtaining ingaas algaas quantum well by mocvd |
| topic | quantum well, ingaas, compensation layer gaasp, misfit dislocation, elastic stresses, mocvd. |
| url | https://www.finechem-mirea.ru/jour/article/view/573 |
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