THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD

THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD

Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum w...

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Bibliographic Details
Main Authors: Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2013-08-01
Series:Тонкие химические технологии
Subjects:
quantum well, ingaas, compensation layer gaasp, misfit dislocation, elastic stresses, mocvd.
Online Access:https://www.finechem-mirea.ru/jour/article/view/573

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