FDTD Investigation of Efficient and Robust Integration Between Si<sub>3</sub>N<sub>4</sub> and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

Si3N4 photonic integrated circuits have gain significant and rapid interest in different photonic applications thanks to its superior passive performance. Nevertheless, optical integration between Si3N4 and Ge-based optical components remains critically challenging especially for optical modulation....

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Bibliographic Details
Main Authors: Natdanai Khongpetch, Worawat Traiwattanapong, Surasak Chiangga, Pichet Limsuwan, Papichaya Chaisakul
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10052661/