Structural Transitions in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Structural Transitions in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms...

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Bibliographic Details
Main Authors: Mario Behrens, Andriy Lotnyk, Hagen Bryja, Jürgen W. Gerlach, Bernd Rauschenbach
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Materials
Subjects:
phase change materials
phase transitions
thin films
optical switching
electron microscopy
Online Access:https://www.mdpi.com/1996-1944/13/9/2082

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https://www.mdpi.com/1996-1944/13/9/2082

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