Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOS...

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Bibliographic Details
Main Author: Jean-Pierre Raskin
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
RF CMOS
silicon-on-insulator (SOI) technology
fully depleted (FD) SOI transistor
RF and millimeter-wave performance
high temperature
cryogenic temperature
Online Access:https://ieeexplore.ieee.org/document/9761241/

Internet

https://ieeexplore.ieee.org/document/9761241/

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