Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
The formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphology, reflection spectra, and photoluminescence spe...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Peter the Great St.Petersburg Polytechnic University
2022-10-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2022.58.23/ |