Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
The formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphology, reflection spectra, and photoluminescence spe...
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2022-10-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2022.58.23/ |
| _version_ | 1811256169173352448 |
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| author | Yan Dmitriy Galkin Nikolay Galkin Konstantin Nepomnyashchiy Aleksandr |
| author_facet | Yan Dmitriy Galkin Nikolay Galkin Konstantin Nepomnyashchiy Aleksandr |
| author_sort | Yan Dmitriy |
| collection | DOAJ |
| description | The formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphology, reflection spectra, and photoluminescence spectra. The minimum duration of anodizing (15 and 10 minutes) at current densities of 10 mA/cm2 and 20 mA/cm2, at which a single-layer PS structure is formed, is established. With an increase in the anodization time, regardless of the current density, a two-layer structure is formed with an internal tree-like porous silicon layer, whose contribution to photoluminescence is minimal, and the reflection coefficient drops strongly due to irretrievable losses in the porous tree-like layer. |
| first_indexed | 2024-04-12T17:36:02Z |
| format | Article |
| id | doaj.art-99cb204ed9974610871d380a6660c474 |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-04-12T17:36:02Z |
| publishDate | 2022-10-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-99cb204ed9974610871d380a6660c4742022-12-22T03:22:58ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232022-10-01153.110.18721/JPM.153.12320714726Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescenceYan Dmitriy0https://orcid.org/0000-0002-0602-9301Galkin Nikolay1https://orcid.org/0000-0003-4127-2988Galkin Konstantin2https://orcid.org/0000-0001-5386-1013Nepomnyashchiy Aleksandr3https://orcid.org/0000-0002-8726-9832Far Eastern State Transport UniversityInstitute of Automation and Control Processes FEB RASInstitute of Automation and Control Processes Far Eastern Branch of the Russian Academy of SciencesInstitute of Automation and Control Processes Far Eastern Branch of the Russian Academy of SciencesThe formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphology, reflection spectra, and photoluminescence spectra. The minimum duration of anodizing (15 and 10 minutes) at current densities of 10 mA/cm2 and 20 mA/cm2, at which a single-layer PS structure is formed, is established. With an increase in the anodization time, regardless of the current density, a two-layer structure is formed with an internal tree-like porous silicon layer, whose contribution to photoluminescence is minimal, and the reflection coefficient drops strongly due to irretrievable losses in the porous tree-like layer.https://physmath.spbstu.ru/article/2022.58.23/siliconbuilt-in p–n junctioncurrent densityanodization timeilluminationporosity |
| spellingShingle | Yan Dmitriy Galkin Nikolay Galkin Konstantin Nepomnyashchiy Aleksandr Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence St. Petersburg Polytechnical University Journal: Physics and Mathematics silicon built-in p–n junction current density anodization time illumination porosity |
| title | Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence |
| title_full | Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence |
| title_fullStr | Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence |
| title_full_unstemmed | Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence |
| title_short | Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence |
| title_sort | influence of current density anodization time and illumination on the thickness of porous silicon in wafers with the built in p n junction and its photoluminescence |
| topic | silicon built-in p–n junction current density anodization time illumination porosity |
| url | https://physmath.spbstu.ru/article/2022.58.23/ |
| work_keys_str_mv | AT yandmitriy influenceofcurrentdensityanodizationtimeandilluminationonthethicknessofporoussiliconinwaferswiththebuiltinpnjunctionanditsphotoluminescence AT galkinnikolay influenceofcurrentdensityanodizationtimeandilluminationonthethicknessofporoussiliconinwaferswiththebuiltinpnjunctionanditsphotoluminescence AT galkinkonstantin influenceofcurrentdensityanodizationtimeandilluminationonthethicknessofporoussiliconinwaferswiththebuiltinpnjunctionanditsphotoluminescence AT nepomnyashchiyaleksandr influenceofcurrentdensityanodizationtimeandilluminationonthethicknessofporoussiliconinwaferswiththebuiltinpnjunctionanditsphotoluminescence |