A Review of Reliability in Gate-All-Around Nanosheet Devices
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, cou...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-02-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/2/269 |