A Review of Reliability in Gate-All-Around Nanosheet Devices
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, cou...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/2/269 |
| _version_ | 1797297486893678592 |
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| author | Miaomiao Wang |
| author_facet | Miaomiao Wang |
| author_sort | Miaomiao Wang |
| collection | DOAJ |
| description | The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, coupled with aggressive pitch scaling, can give rise to reliability challenges. In this article, we present a review of the key reliability mechanisms in GAA NS FET, including bias temperature instability (BTI), hot carrier injection (HCI), gate oxide (Gox) time-dependent dielectric breakdown (TDDB), and middle-of-line (MOL) TDDB. We aim to not only underscore the unique reliability attributes inherent to NS architecture but also provide a holistic view of the status and prospects of NS reliability, taking into account the challenges posed by future scaling. |
| first_indexed | 2024-03-07T22:21:04Z |
| format | Article |
| id | doaj.art-99ddbf7a63e04b9a8401c6d4728b0e5d |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-07T22:21:04Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-99ddbf7a63e04b9a8401c6d4728b0e5d2024-02-23T15:27:51ZengMDPI AGMicromachines2072-666X2024-02-0115226910.3390/mi15020269A Review of Reliability in Gate-All-Around Nanosheet DevicesMiaomiao Wang0IBM Research Albany, 257 Fuller Road, Albany, NY 12203, USAThe gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, coupled with aggressive pitch scaling, can give rise to reliability challenges. In this article, we present a review of the key reliability mechanisms in GAA NS FET, including bias temperature instability (BTI), hot carrier injection (HCI), gate oxide (Gox) time-dependent dielectric breakdown (TDDB), and middle-of-line (MOL) TDDB. We aim to not only underscore the unique reliability attributes inherent to NS architecture but also provide a holistic view of the status and prospects of NS reliability, taking into account the challenges posed by future scaling.https://www.mdpi.com/2072-666X/15/2/269gate-all-aroundnanosheetreliabilityBTIHCITDDB |
| spellingShingle | Miaomiao Wang A Review of Reliability in Gate-All-Around Nanosheet Devices Micromachines gate-all-around nanosheet reliability BTI HCI TDDB |
| title | A Review of Reliability in Gate-All-Around Nanosheet Devices |
| title_full | A Review of Reliability in Gate-All-Around Nanosheet Devices |
| title_fullStr | A Review of Reliability in Gate-All-Around Nanosheet Devices |
| title_full_unstemmed | A Review of Reliability in Gate-All-Around Nanosheet Devices |
| title_short | A Review of Reliability in Gate-All-Around Nanosheet Devices |
| title_sort | review of reliability in gate all around nanosheet devices |
| topic | gate-all-around nanosheet reliability BTI HCI TDDB |
| url | https://www.mdpi.com/2072-666X/15/2/269 |
| work_keys_str_mv | AT miaomiaowang areviewofreliabilityingateallaroundnanosheetdevices AT miaomiaowang reviewofreliabilityingateallaroundnanosheetdevices |