A Review of Reliability in Gate-All-Around Nanosheet Devices

A Review of Reliability in Gate-All-Around Nanosheet Devices

The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, cou...

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Bibliographic Details
Main Author:	Miaomiao Wang
Format:	Article
Language:	English
Published:	MDPI AG 2024-02-01
Series:	Micromachines
Subjects:	gate-all-around nanosheet reliability BTI HCI TDDB
Online Access:	https://www.mdpi.com/2072-666X/15/2/269

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