High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Abstract Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capa...

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Bibliographic Details
Main Authors: Vigneshwaran Chandrasekaran, Michael Titze, Anthony R. Flores, Deanna Campbell, Jacob Henshaw, Andrew C. Jones, Edward S. Bielejec, Han Htoon
Format: Article
Language:English
Published: Wiley 2023-06-01
Series:Advanced Science
Subjects:
focused ion beam
in situ photoluminescence
quantum defects
silicon carbide
single photon sources
Online Access:https://doi.org/10.1002/advs.202300190

Internet

https://doi.org/10.1002/advs.202300190

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