High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
Abstract Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capa...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-06-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202300190 |
| _version_ | 1827918397620355072 |
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| author | Vigneshwaran Chandrasekaran Michael Titze Anthony R. Flores Deanna Campbell Jacob Henshaw Andrew C. Jones Edward S. Bielejec Han Htoon |
| author_facet | Vigneshwaran Chandrasekaran Michael Titze Anthony R. Flores Deanna Campbell Jacob Henshaw Andrew C. Jones Edward S. Bielejec Han Htoon |
| author_sort | Vigneshwaran Chandrasekaran |
| collection | DOAJ |
| description | Abstract Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies. |
| first_indexed | 2024-03-13T03:41:42Z |
| format | Article |
| id | doaj.art-99f2e2aa1aea458cb6d6b81ae22aae62 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-13T03:41:42Z |
| publishDate | 2023-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-99f2e2aa1aea458cb6d6b81ae22aae622023-06-23T07:34:34ZengWileyAdvanced Science2198-38442023-06-011018n/an/a10.1002/advs.202300190High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence FeedbackVigneshwaran Chandrasekaran0Michael Titze1Anthony R. Flores2Deanna Campbell3Jacob Henshaw4Andrew C. Jones5Edward S. Bielejec6Han Htoon7Center for Integrated Nanotechnologies Materials Physics and Applications Division Los Alamos National Laboratory Los Alamos NM 87545 USASandia National Laboratories Albuquerque NM 87123 USASandia National Laboratories Albuquerque NM 87123 USASandia National Laboratories Albuquerque NM 87123 USACenter for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87123 USACenter for Integrated Nanotechnologies Materials Physics and Applications Division Los Alamos National Laboratory Los Alamos NM 87545 USASandia National Laboratories Albuquerque NM 87123 USACenter for Integrated Nanotechnologies Materials Physics and Applications Division Los Alamos National Laboratory Los Alamos NM 87545 USAAbstract Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.https://doi.org/10.1002/advs.202300190focused ion beamin situ photoluminescencequantum defectssilicon carbidesingle photon sources |
| spellingShingle | Vigneshwaran Chandrasekaran Michael Titze Anthony R. Flores Deanna Campbell Jacob Henshaw Andrew C. Jones Edward S. Bielejec Han Htoon High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback Advanced Science focused ion beam in situ photoluminescence quantum defects silicon carbide single photon sources |
| title | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
| title_full | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
| title_fullStr | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
| title_full_unstemmed | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
| title_short | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
| title_sort | high yield deterministic focused ion beam implantation of quantum defects enabled by in situ photoluminescence feedback |
| topic | focused ion beam in situ photoluminescence quantum defects silicon carbide single photon sources |
| url | https://doi.org/10.1002/advs.202300190 |
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