Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using C4H2F6-based gas

Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using C4H2F6-based gas

Abstract Oxide/Nitride/Oxide/Nitride (ONON; SiO2/SiNx/SiO2/SiNx) stacked structure is widely used in the 3D vertical structure of semiconductor cells. Previously, to form a 3D cells, photoresist (PR) was patterned and repeatedly trimmed on the top of ONON after the etching of one ON layer. Due to th...

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Bibliographic Details
Main Authors: Nam Il Cho, Jong Woo Hong, Hee Jin Yoo, Hyeong Joon Eoh, Chan Ho Kim, Jun Won Jeong, Kyung Lim Kim, Jung Hun Kwak, Yong Jun Cho, Dong Woo Kim, Geun Young Yeom
Format: Article
Language:English
Published: Nature Portfolio 2024-10-01
Series:Scientific Reports
Subjects:
ONON stack feature
Maskless etching
Oxide/Nitride
C4F8
C4F6
C4H2F6
Online Access:https://doi.org/10.1038/s41598-024-74107-y

Internet

https://doi.org/10.1038/s41598-024-74107-y

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