TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power
Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system efficiency and lifetime. The BULK metal oxide semiconductor field-effect transistor (MOSFET) has relatively high power dissipation a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-09-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/9/4/29 |