1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Abstract In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2. High-quality and stable MOS interfa...

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Bibliographic Details
Main Authors: Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu
Format: Article
Language:English
Published: SpringerOpen 2022-01-01
Series:Nanoscale Research Letters
Subjects:
Free standing gallium nitride (GaN)
Trench MOSFET
GaN MOSFET
Breakdown
TCAD
Online Access:https://doi.org/10.1186/s11671-022-03653-z

Internet

https://doi.org/10.1186/s11671-022-03653-z

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