Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B),...
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
Hindawi Limited
2009-01-01
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| Σειρά: | Advances in Materials Science and Engineering |
| Διαθέσιμο Online: | http://dx.doi.org/10.1155/2009/309209 |