Multi-Level Resistive Switching in SnSe/SrTiO<sub>3</sub> Heterostructure Based Memristor Device

Multi-Level Resistive Switching in SnSe/SrTiO<sub>3</sub> Heterostructure Based Memristor Device

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO<sub>3</sub>(STO) heterojunction-based memory devices with silver...

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Bibliographic Details
Main Authors: Tsz-Lung Ho, Keda Ding, Nikolay Lyapunov, Chun-Hung Suen, Lok-Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Ji-Yan Dai
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
memristor
RRAM
perovskite
SrTiO<sub>3</sub>
SnSe
Online Access:https://www.mdpi.com/2079-4991/12/13/2128

Internet

https://www.mdpi.com/2079-4991/12/13/2128

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