High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene i...

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Hlavní autoři: Norifumi Endoh, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara, Makoto Kawai, Yoshihiro Kubota, Takuo Ohkochi, Masato Kotsugi, Koji Horiba, Hiroshi Kumigashira, Maki Suemitsu, Issei Watanabe, Hirokazu Fukidome
Médium: Článek
Jazyk:English
Vydáno: MDPI AG 2021-02-01
Edice:Nanomaterials
Témata:
epitaxial graphene
SiC
affordable
transistor
terahertz
On-line přístup:https://www.mdpi.com/2079-4991/11/2/392

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https://www.mdpi.com/2079-4991/11/2/392

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