ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing

ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing

Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, neuromorphic computing system has the potential to...

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Bibliographic Details
Main Authors: Yifu Huang, Yuqian Gu, Xiaohan Wu, Ruijing Ge, Yao-Feng Chang, Xiyu Wang, Jiahan Zhang, Deji Akinwande, Jack C. Lee
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-11-01
Series:Frontiers in Nanotechnology
Subjects:
RRAM
2D material
ReSe2
neuromorphic computing
verilog-a
artificial neural network
Online Access:https://www.frontiersin.org/articles/10.3389/fnano.2021.782836/full

Internet

https://www.frontiersin.org/articles/10.3389/fnano.2021.782836/full

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