Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

Abstract A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are reconfigured in n‐channel or p‐channel modes via electrostatic dop...

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Bibliographic Details
Main Authors: Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Electronic Materials
Subjects:
logic‐in‐memory
positive feedback loops
reconfigurable logic gates
reconfigurable logic‐in‐memory cells
triple‐gated feedback field‐effect transistors
Online Access:https://doi.org/10.1002/aelm.202300526

Internet

https://doi.org/10.1002/aelm.202300526

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