Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with a breakdown voltage of 60 V was designed.We an...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Science Press
2022-10-01
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| Series: | Fushe yanjiu yu fushe gongyi xuebao |
| Subjects: | |
| Online Access: | http://www.fs.sinap.ac.cn/thesisDetails#10.11889/j.1000-3436.2022-0035&lang=zh |