The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a...

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Bibliographic Details
Main Authors: Yanan Liang, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, Han Yang
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
AlGaN/GaN HEMT
cascode structure
single event effects
technology computer-aided design simulation
heavy-ion irradiation experiment
Online Access:https://www.mdpi.com/2079-9292/10/4/440

Internet

https://www.mdpi.com/2079-9292/10/4/440

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