Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray...

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Bibliographic Details
Main Authors: M A Zambrano-Serrano, Carlos A Hernández, O de Melo, M Behar, S Gallardo-Hernández, Y L Casallas-Moreno, A Ponce, A Hernandez-Robles, D Bahena-Uribe, C M Yee-Rendón, M López-López
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:Materials Research Express
Subjects:
GaN
molecular beam epitaxy
heteroepitaxy
silicon
Si-doping
crystal defects
Online Access:https://doi.org/10.1088/2053-1591/ac7512

Internet

https://doi.org/10.1088/2053-1591/ac7512

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